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2SB834L-X-AB3-R 데이터시트(PDF) 4 Page - Unisonic Technologies

부품명 2SB834L-X-AB3-R
상세설명  HIGH VOLTAGE TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB834L-X-AB3-R 데이터시트(HTML) 4 Page - Unisonic Technologies

  2SB834L-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SB834L-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SB834L-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SB834L-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SB834L-X-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SB834
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R204-018.F
TYPICAL CHARACTERISTICS
40
0
Temperature, TC (°C)
100
0
Power Derating
125
150
50
25
10
15
75
5
20
25
30
35
-3.0
-2.0
Collector-Emitter Voltage, VCE (V)
-1.0
-3.0
-6.0
-4.0
-5.0
-2.0
-1.0
0
Collector Current vs.
Collector-Emitter Voltage
-20
-30
-40
-50
IB = -10mA
TC=25°C
TO-126/TO-220F
TO-220
300
Collector Current, IC (mA)
50
100
-100
-3k
-200
-1k
-20
-2
30
10
DC Current Gain
-5 -10
-50
-500
VCE = 5.0V
-3.0
Base-Emitter Voltage, VBE (V)
-2.0
-0.8
-1.6
-1.0
0
-0.4
-1.2
VCE = 5.0V
Collector Current vs.
Base-Emitter Voltage
TC=100°C
25°C
-25°C
-0.4
Collector Current, IC (mA)
-0.1
-0.2
-100
-3k
-200
-1k
-20
-2
-0.05
-0.02
Collector-Emitter Saturation Voltage
vs. Collector Current
-5 -10
-50
-500
-2k
-1.0
Common Emitter
IC/IB = 10
-5.0
Collector Emitter Voltage, VCE (V)
-1.0
-2.0
-1.0
-0.5
-0.1
Active-Region Safe Operating AREA
(SOA)
-10
100ms
-0.2
10ms
1ms
DC
-10
-100
-5.0
-2.0
-7.0
-20
-70
-50
Bonding Wire Limit
Second Breakdown Limit
Thermally Limited
at TC=25°C(Single Pulse)
TC=100°C
25°C
-25°C
-60
-80
-70
TC=100°C
TC=25°C
TC=-25°C
SOT-89



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