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2SB834L-X-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 2SB834L-X-TN3-R
상세설명  HIGH VOLTAGE TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SB834L-X-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  2SB834L-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SB834L-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SB834L-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies 2SB834L-X-TN3-R Datasheet HTML 4Page - Unisonic Technologies 2SB834L-X-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SB834
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R204-018.F
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
IC
-3
A
Base Current
IB
-0.5
A
Power Dissipation (TC=25°C)
SOT-89
PD
3
W
TO-220
30
W
TO-252
26
W
TO-126/TO-220F
25
W
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=-50mA
-60
V
Collector Cut-Off Current
ICBO
VCB=-60V
-100
μA
Emitter Cut-Off Current
IEBO
VEB=-7V
-100
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-3A, IB=0.3A
-1
V
Base-Emitter On Voltage
VBE(ON)
VCE=-5V, IC=-0.5A
-0.7
-1
V
DC Current Gain
hFE1
IC=-0.5A, VCE=-5V
60
300
hFE2
IC=-3A, VCE=-5V
20
Current Gain Bandwidth Product
fT
VCE=-5V, IC=-0.5A
9
MHZ
CLASSIFICATION of hFE1
RANK
O
Y
GR
RANGE
60-120
100-200
150-300



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