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2SC5200 데이터시트(PDF) 3 Page - Unisonic Technologies |
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2SC5200 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 4 page ![]() 2SC5200 NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R214-005, B TYPICAL CHARACTERISTICS 0.01 100 1 3 10 0.1 0.3 0.1 1 Collector-Emitter Saturation Voltage vs. Collector Current 25 0.03 0.01 -25 TC =100℃ COMMON EMITTER IC / IB = 10 0.01 100 100 300 10 10 30 0.1 1 25 3 1 -25 TC =100℃ COMMON EMITTER IC / IB = 10 Collector Current, IC (A) Collector Current, IC (A) DC Current Gain vs. Collector Current 3 1000 10 30 300 3 5 10 100 DC OPERATION TC =25°C 30 50 0.3 0.5 0.05 0.1 1 0.03 VCEO MAX. 1ms IC MAX. (PULSED) SINGLE NONREPETITIVE PULSE TC = 25°C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. IC MAX. (CONTINUOUS) Safe Operating Area 100ms Collector-Emitter Voltage, VCE (V) 10ms |
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