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2SD965G-X-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 2SD965G-X-TN3-R
상세설명  LOW VOLTAGE HIGH CURRENT TRANSISTOR
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

2SD965G-X-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  2SD965G-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SD965G-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SD965G-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies 2SD965G-X-TN3-R Datasheet HTML 4Page - Unisonic Technologies 2SD965G-X-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SD965/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R209-007.F
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
2SD965
VCEO
20
V
2SD965A
30
V
Emitter-Base Voltage
VEBO
7
V
Collector Dissipation
SOT-89
PC
500
mW
TO-92
750
mW
TO-252
1
W
Collector Current
IC
5
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA, IE=0
40
V
Collector-Emitter Breakdown
Voltage
2SD965
BVCEO
IC=1mA, IB=0
20
V
2SD965A
30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, IC=0
7
V
Collector Cut-off Current
ICBO
VCB=10V, IE=0
100
nA
Emitter Cut-off Current
IEBO
VEB=7V, IC=0
100
nA
DC Current Gain
hFE1
VCE=2V, IC=1mA
200
hFE2
VCE=2V, IC=0.5A
230
800
hFE3
VCE=2V, IC=2A
150
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB= 0.1A
1
V
Current Gain Bandwidth Product
fT
VCE=6V, IC=50mA
150
MHz
Output Capacitance
Cob
VCB=20V, IE=0, f=1MHz
50
pF
CLASSIFICATION OF hFE2
RANK
Q
R
S
RANGE
230-380
340-600
560-800



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