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PJS6801 데이터시트(PDF) 1 Page - Pan Jit International Inc. |
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PJS6801 데이터시트(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PPJS6801 May 6,2015-REV.03 Page 1 30V P-Channel Enhancement Mode MOSFET Voltage -30 V Current -3.2A SOT-23 6L-1 Unit : inch(mm) Features RDS(ON) , VGS@-10V, ID@-3.2A<74m Ω RDS(ON) , VGS@-4.5V, ID@-2.3A<83m Ω RDS(ON) , VGS@-2.5V, ID@-1.4A<115m Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L-1 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS +12 V Continuous Drain Current ID -3.2 A Pulsed Drain Current IDM -13 A Power Dissipation Ta=25 oC PD 1.25 W Derate above 25 oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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