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PJS6806 데이터시트(PDF) 1 Page - Pan Jit International Inc. |
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PJS6806 데이터시트(HTML) 1 Page - Pan Jit International Inc. |
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1 / 6 page ![]() PPJS6806 December 31,2014-REV.02 Page 1 30V N-Channel Enhancement Mode MOSFET Voltage 30 V Current 4A SOT-23 6L-1 Unit : inch(mm) Features RDS(ON) , VGS@10V, ID@4.0A<48m Ω RDS(ON) , VGS@4.5V, ID@2.8A<70m Ω Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 6L-1 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.014 grams Marking: ST6 PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20 V Continuous Drain Current ID 4 A Pulsed Drain Current IDM 16 A Power Dissipation Ta=25 oC PD 1.25 W Derate above 25 oC 10 mW/ oC Operating Junction and Storage Temperature Range TJ,TSTG -55~150 oC Typical Thermal resistance - Junction to Ambient (Note 3) RθJA 100 oC/W Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) |
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