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BU406G-X-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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BU406G-X-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() BU406 NPN PLANAR TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R203-021.F ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage (IE=0) VCBO 400 V Collector-Emitter Voltage (VBE=-1.5V) VCEV 400 V Collector-Emitter Voltage (IB=0) VCEO 200 V Emitter-Base Voltage (IC=0) VEBO 6 V Collector Current IC 7 A Collector Peak Current (repetitive) ICM 10 A Collector Peak Current (tp=10ms) ICM 15 A Base Current IB 4 A Collector Dissipation (TC≤25°C) TO-220/TO-263 PC 60 W TO-220F/TO-220F1 27 TO-3P 65 Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal Resistance, Junction to Case TO-220/TO-263 θJC 2.08 °C/W TO-220F/TO-220F1 4.63 TO-3P 1.92 ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collect Cutoff Current (VBE=0) ICES VCE=400V 5 mA VCE=250V, TC=150°C 100 μA VCE=250V 1 mA Emitter Cut-off Current (IC=0) IEBO VBE=6V 1 mA Collector-Emitter Saturation Voltage VCE(SAT)* IC=5A, IB=0.5A 1 V Base-Emitter Saturation Voltage VBE(SAT)* IC=5A, IB=0.5A 1.2 V DC Current Gain hFE VCE=10V, IC=500mA 70 240 Transition Frequency fT IC=500mA, VCE=10V 10 MHz Turn-off Time tOFF IC=5A, IB=0.5A 0.75 μs Second Breakdown Collector Current Is/b VCE=40V, t=10ms 4 A Note: Pulse duration=300μs, duty cycle 1.5%. CLASSIFICATION OF hFE RANK A B RANGE 70 ~ 120 110 ~ 240 |
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