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MJE2955TL-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MJE2955TL-TN3-R
상세설명  HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MJE2955TL-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  MJE2955TL-TN3-R Datasheet HTML 1Page - Unisonic Technologies MJE2955TL-TN3-R Datasheet HTML 2Page - Unisonic Technologies MJE2955TL-TN3-R Datasheet HTML 3Page - Unisonic Technologies MJE2955TL-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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MJE2955T
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2
www.unisonic.com.tw
QW-R203-012.E
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-70
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector current
IC
-10
A
Base Current
IB
-6
A
Power Dissipation (TA=25°C)
TO-220
PD
75
W
TO-252
20
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C
ELECTRICAL CHARACTERISTICS (T
A=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=-200mA
-60
V
Collector-Base Breakdown Voltage
BVCBO
IC=-10mA
-70
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-10mA
-5
V
Collector Cut-Off Current
ICBO
VCB=-70V
-1
mA
ICEO
VCE=-30V
-700
A
ICEX
VCE=-70V, VEB(OFF)=-1.5V
-1
mA
Emitter Cut-Off Current
IEBO
VEB=-5V
-5
mA
Collector-Emitter Saturation Voltage
VCE(SAT)1
IC=-4A, IB=-0.4A
-1.1
V
VCE(SAT)2
IC=-10A, IB=-3.3A
-8.0
Baser-Emitter on Voltage
VBE(ON)
VCE=-4V, IC=-4A
-1.8
V
DC Current Gain
hFE1
IC=-4A, VCE=-4V
20
100
hFE2
IC=-10A, VCE=-4V
5
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-0.5A, f=1MHz
2
MHZ



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