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MJD210G-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MJD210G-TN3-R
상세설명  PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MJD210G-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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MJD210
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R213-001.C
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-7
V
Continuous
-5
A
Collector Current
Peak
IC
-10
A
Base Current
IB
-1
A
TC=25°C
12.5
W
Derate above 25
°C0.1
W/
°C
Ta=25
°C (Note2)
1.4
W
Total Device Dissipation
Derate above 25
°C
PD
0.011
W/
°C
Junction Temperature
TJ
+150
°C
Storage Junction Temperature
TSTG
-65 ~ +150
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
THERMAL DATA (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
89.3
°C/W
Junction to Case
θJC
10
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0
-25
V
VCB=-40V, IE=0
-100
nA
Collector Cutoff Current
ICBO
VCB=-40V, IE=0, TJ=125°C
-100
nA
Emitter Cutoff Current
IEBO
VBE=-7V, IC=0
-100
nA
ON CHARACTERISTICS
IC=-500mA, VCE=-1V
70
IC=-2A, VCE=-1V
45
180
DC Current Gain (Note 1)
hFE
IC=-5A, VCE=-2V
10
IC=-500mA, IB=-50mA
-0.3
IC=-2A, IB=-200mA
-0.75
Collector-Emitter Saturation Voltage (Note 1)
VCE(SAT)
IC=-5A, IB=-1A
-1.8
V
Base-Emitter Saturation Voltage (Note 1)
VBE(SAT)
IC=-5A, IB=-1A
-2.5
V
Base-Emitter On Voltage (Note 1)
VBE(ON)
IC=-2A, VCE=-1V
-1.6
V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 2)
fT
IC=-100mA, VCE=-10V,
fTEST = 10MHz
65
MHz
Output Capacitance
COB
VCB=-10V, IE=0, f=0.1MHz
120
pF
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%.
2. fT =｜hFE｜‧fTEST.



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