BTC1510F3

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R223-002.E



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

150

V

Collector-Emitter Voltage

150

V

Emitter-Base Voltage

5

V

Collector Current

DC

10

A

Pulse(Note 2)

15

Collector Dissipation

TO-220/TO-220F

TO-220F1

2

W

TO-252

1.1

W

TO-263

2

W

TO-220

72

W

TO-220F/TO-220F1

36

W

TO-252

44

W

TO-263

60

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse test: Pulse Width=100ms



ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

150

V

Collector-Emitter Breakdown Voltage

150

V

Base-Emitter Turn-On Voltage (Note)

2.8

V

4.5

3

V

Collector Cutoff Current

200

µA

Collector Cutoff Current

200

µA

Emitter Cutoff Current

2

mA

ON CHARACTERISTICS

DC Current Gain (Note)

2

20

K

100

Base-Emitter Saturation Voltage(Note)

2

V

Collector-Emitter Saturation Voltage

(Note)

1.5

V

3

2

Note: Pulse test: Pulse Width≦380μs, Duty Cycle≦2%