IMT2AG-AG6-R datasheet(3/4 Pages) UTC

3 / 4 page

IMT2A

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R215-003.E



TYPICAL CHARACTERISTICS

-10

-8

-6

-4

-2

-0.4

-0.8

-1.2

-1.6

-2.0

Collector to Emitter Voltage,VCE (V)

Grounded Emitter Output Characteristics (Ⅰ)

-50

-1

Collector to Emitter Voltage,VCE (V)

Grounded Emitter Output Characteristics (Ⅱ)

-40

-30

-20

-10

-2

-3

-4

-5

VCE=-6V

-50

-20

-10

-5

-2

-1

-0.5

-0.2

-0.1

-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

Base to Emitter Voltage,VBE (V)

Grounded Emitter Propagation Characteristics

TA=25℃

500

200

100

-0.2 -0.5 -1

-2

-5 -10 -20

-50 -100

Collector Current,IC (mA)

DC Current Gain vs. Collector Current

TA=25℃

-1

-0.5

-0.2

-0.1

-0.05

-0.2 -0.5 -1

-2

-5 -10 -20

-50 -100

Collector Current,IC (mA)

Collector-Emitter Saturation Voltage

vs. Collector Current

TA=25℃

IB=0A

IB=-5µA

IB=-10µA

IB=-15µA

IB=-20µA

IB=-25µA

IB=-30µA

IB=0A

IB=-50µA

IB=-100µA

IB=-150µA

IB=-200µA

IB=-250µA

IB=-300µA

IB=-350µA

Ta=100℃

25℃

-40℃

TA=25℃

VCE=-5V

-3V

-1V

Ic / IB =50

Ic / IB =20

Ic / IB =10

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