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IMX17L-AG6-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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IMX17L-AG6-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() IMX17 DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R215-00.D ABSOLUTE MAXIMUM RATINGS (T A=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Power Dissipation PD 300 (TOTAL) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. 200mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA 60 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE=100µA 5 V Collector Cut-Off Current ICBO VCB=30V 0.1 µA Emitter Cut-Off Current IEBO VEB=4V 0.1 µA Collector-Emitter Saturation Voltage VCE(SAT) IC=500mA, IB=50mA 0.6 V DC Current Transfer Ratio hFE VCE= 3V, IC= 100mA(note) 120 390 Transition Frequency (Note) fT VCE=5V, IE=-20mA, f=100MHz 250 MHz Output Capacitance COB VCB= 10V, IE=0A, f=1MHz 7 pF Note: Measured using pulse current. |
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