MMBTA05G-AL3-R datasheet(2/3 Pages) UTC

2 / 3 page

MMBTA05

AMPLIFIER TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-099.B



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

Collector-emitter voltage

VCEO

Emitter-base voltage

VEBO

Collector current - Continuous

500

Power Dissipation, @TA=25℃

150

Junction Temperature

125

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

junction to ambient (Note)

θJA

833

°C/W

junction to case

θJC

347

°C/W

Note: θJA is measured with the device soldered into a typical printed circuit board.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Collector-emitter breakdown voltage

V(BR)CEO

IC=1.0mA, IB=0(Note 1)

Emitter-base breakdown voltage

V(BR)EBO

IE=100A, Ic=0

Collector cutoff current

ICEO

VCE=60V, IB=0

0.1

A

Collector cutoff current

ICBO

VCB=60V, IE=0

0.1

A

ON CHARACTERISTICS

DC current gain

hFE

IC=10mA, VCE=1V

IC=100mA, VCE=1V

100

Collector-emitter saturation voltage

VCE(SAT)

IC=100mA, IB=10mA

0.25

Base-emitter on voltage

VBE(ON)

IC=100mA, VCE=1V

1.2

SMALL-SIGNAL CHARACTERISTICS

Current gain bandwidth product

IC=10mA, VCE=2V, f=100MHz(Note 2) 100

MHz

Note: 1. Pulse test: PW<=300

s, Duty Cycle<=2%

2. fT is defined as the frequency at which IhfeI extrapolates to unity.

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