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MMDT3904G-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 MMDT3904G-AL6-R
상세설명  DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMDT3904G-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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MMDT3904
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-013.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous
IC
200
mA
Power Dissipation
PD
200
mW
Thermal Resistance, Junction to Ambient
θJA
625
°C/W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS (Note 1)
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10μA, IE = 0
60
V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1.0mA, IB = 0
40
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10μA, IC = 0
6
V
Collector Cut-off Current
ICEX
VCE = 30V, VEB(OFF) = 3.0V
50
nA
Base Cut-off Current
IBL
VCE = 30V, VEB(OFF) = 3.0V
50
nA
ON CHARACTERISTICS (Note 1)
DC Current Gain
hFE
IC = 100μA, VCE = 1.0V
40
IC = 1.0mA, VCE = 1.0V
70
IC = 10mA, VCE = 1.0V
100
300
IC = 50mA, VCE = 1.0V
60
IC = 100mA, VCE = 1.0V
30
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1.0mA
0.20
V
IC = 50mA, IB = 5.0mA
0.30
V
Base- Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 1.0mA
0.65
0.85
V
IC = 50mA, IB = 5.0mA
0.95
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
COB
VCB = 5.0V, f = 1.0MHz, IE = 0
4.0
pF
Current Gain-Bandwidth Product
fT
VCE = 20V, IC = 10mA, f = 100MHz
300
MHz
Turn On Time
tON
VCC=3V,VBE=0.5V,
IC=10mA,IB1=1mA
70
ns
Turn Off Time
tOFF
IB1=1B2=1mA
250
ns
Note: Pulse test: PW ≤ 300μs, Duty Cycle ≤ 2.0%.



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