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STD888G-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 STD888G-TN3-R
상세설명  HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

STD888G-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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STD888
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R209-028.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage (IE=0)
VCBO
-60
V
Collector-Emitter Voltage (IB=0)
VCEO
-30
V
Emitter-Base Voltage (IC=0)
VEBO
-6
V
Collector Current
IC
-5
A
Collector Peak Current (tp<5ms)
ICM
-10
A
Total Dissipation at TC=25°C
PD
15
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TCASE=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IE=0, IC=-100µA
-60
V
Collector-Emitter Breakdown Voltage
BVCEO (Note 1) IB=0, IC=-10mA
-30
V
Emitter-Base Breakdown Voltage
BVEBO
IC=0, IE=-100µA
-6
V
Collector Cut-off Current
ICBO
VCB=-30V, IE=0
-10
nA
Emitter Cut-off Current
IEBO
IC=0, VEB=-6V
-10
nA
Collector-Emitter Saturation Voltage
VCE(sat)
(Note 1)
IC=-500mA, IB=-5mA
-0.15
V
IC=-2A, IB=-50mA
-0.25
V
IC=-5A, IB=-250mA
-0.70
V
IC=-6A, IB=-250mA
-0.70
V
IC=-8A, IB=-400mA
-1
V
IC=-10A, IB=-500mA
-1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
(Note 1)
IC=-2A, IB=-50mA
-1.1
V
IC=-6A, IB=-250mA
-1.4
V
DC Current Gain
hFE
(Note 1)
IC=-10mA, VCE=-1V
150
200
IC=-500mA, VCE=-1V
150
200 300
IC=-5A, VCE=-1V
75
100
IC=-8A, VCE=-1V
40
55
IC=-10A, VCE=-1V
15
35
Delay Time
tD
IC=-3A, IB1=-IB2=-60mA
VCC=-20V
180 220
ns
Rise Time
tR
160 210
ns
Storage Time
tS
250 300
ns
Fall Time
tF
80
100
ns
Note: 1. Pulsed: Pulse duration=300µs, duty cycle≤1.5%



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