2SB936G-TN3-R datasheet(2/3 Pages) UTC

2 / 3 page

2SB936

Preliminary

PNP EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R209-029.a



ABSOLUTE MAXIMUM RATINGS (TC=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

Collector-Emitter Voltage

VCEO

-20

Emitter-Base Voltage

VEBO

-5

Collector Current

-10

Peak Collector Current

ICP

-20

Collector Power Dissipation

TC=25°C

TA=25°C

1.3

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TC=25°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-10mA, IE=0

-40

Collector-Emitter Voltage

BVCEO

IC=-10mA, IB=0

-20

Emitter-Base Breakdown Voltage

BVEBO

IC=-10mA, IC=0

-5

Collector Cut-Off Current

ICBO

VCB=-40V, IE=0

-50

µA

Emitter Cut-Off Current

IEBO

VEB=-5V, IC=0

-50

µA

DC Current Gain

hFE1

VCE=-2V, IC=-0.1A

hFE2

VCE=-2V, IC=-3 A

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-10A, IB=-0.33A

-0.6

Base-Emitter Saturation Voltage

VBE(sat)

IC=-10A, IB=-0.33A

-1.5

Transition Frequency

VCE=-10V, f=10MHz, IC=-0.5A

100

MHz

Output Capacitance

Cob

VCB=-10V, f=1MHz, IE=0

400

Turn-On Time

ton

IC=-3A, IB1=-0.1A, IB2=0.1A

0.1

μs

Storage Time

0.5

μs

Fall Time

0.1

μs

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