2SK3666

Preliminary

JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-109.a



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Drain Voltage

-30

V

Gate Current

10

mA

Drain Current

Continuous

10

mA

Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Gate-Drain Breakdown Voltage

-30

V

Drain-Source Leakage Current

0.6

6.0

mA

Gate-Source Leakage Current

-1.0

nA

Forward Transfer Admittance

│

yfs│

3.0

6.5

mS

ON CHARACTERISTICS

Cutoff Voltage

-0.18 -0.95

-2.2

V

Static Drain-Source On-State Resistance

270

Ω

DYNAMIC PARAMETERS

Input Capacitance

4

pF

Reverse Transfer Capacitance

1.1

pF



RANK

2

3

4

RANGE

0.6 ~ 1.5

1.2 ~ 3.0

2.5 ~6.0