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DBC2315G-AG6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 DBC2315G-AG6-R
상세설명  DIGITAL TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DBC2315G-AG6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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DBC2315
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R222-008.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
LIMITS
UNIT
Collector-Base Voltage
TR1
VCBO
-50
V
TR2
50
V
Collector-Emitter Voltage
TR1
VCEO
-50
V
TR2
50
V
Emitter-Base Voltage
TR1
VEBO
-5
V
TR2
5
V
Collector Current
TR1
IC
-500
mA
TR2
100
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
TR1 (PNP)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Input Voltage
VIN(OFF) VCC =-5V, IOUT =-100μA
-0.3
V
VIN(ON) VOUT =-0.3V, IOUT =-20mA
-2
V
Output Voltage
VOUT(ON) IOUT/IIN =-50mA/-2.5mA
-0.1
-0.3
V
Input Current
IIN
VIN=-5V
-3.0
mA
Output Current
IOUT(OFF) VCC =-50V, VIN =0V
-0.5
μA
ON CHARACTERISTICS
DC Current Gain
hFE
VOUT =-5V, IOUT =-50mA
56
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
1.54
2.2
2.86
KΩ
Resistor Ratio
R2/R1
3.6
4.5
5.5
Transition Frequency (Note)
fT
VCE =-10V, IE =50mA, f=100MHz
200
MHz
TR2 (NPN)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO IC=50μA
50
V
Collector-Emitter Breakdown Voltage
BVCEO IC=1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO IE=50μA
5
V
Collector Cutoff Current
ICBO
VCB=50V
0.5
μA
Emitter Cutoff Current
IEBO
VEB=4V
0.5
μA
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1mA, IB=0.1mA
0.3
V
ON CHARACTERISTICS
DC Current Transfer Ratio
hFE
VCE=5V, IC=1mA
100
250
600
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
70
100
130
KΩ
Transition Frequency (Note)
fT
VCE=10V, IE=-5mA, f=100MHz
250
MHZ
Note: Transition frequency of the device.



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