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DTB123EG-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 DTB123EG-AE3-R
상세설명  DIGITAL TRANSISTORS
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

DTB123EG-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  DTB123EG-AE3-R Datasheet HTML 1Page - Unisonic Technologies DTB123EG-AE3-R Datasheet HTML 2Page - Unisonic Technologies DTB123EG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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DTB123E
Preliminary
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R225-005.a
ABSOLUTE MAXIMUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
-50
V
Input Voltage
VIN
-12
V
10
V
Output Current
IC
-500
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Input Voltage
VIN(OFF)
VCC =-5V, IOUT =-100μA
-0.5
V
VIN(ON)
VOUT=-0.3V, IO=-20mA
-3
Output Voltage
VOUT(ON)
IOUT/IIN=-50mA/-2.5mA
-0.1
-0.3
V
Input Current
IIN
VIN=-5V
-3.8
mA
Output Current
IOUT(OFF)
VCC=-50V, VIN=0V
-0.5
μA
ON CHARACTERISTICS
DC Current Gain
hFE
VOUT=-5V, IOUT=-50mA
39
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
1.54
2.2
2.86
kΩ
Resistor Ratio
R2/R1
0.8
1
1.2
Transition Frequency (Note)
fT
VCE =-10V, IE =50mA, f=100MHz
200
MHz
Note: Transition frequency of the device



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