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ISL9V3040D3SL-TQ2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 ISL9V3040D3SL-TQ2-R
상세설명  N-CHANNEL JUNCTION FET
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

ISL9V3040D3SL-TQ2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  ISL9V3040D3SL-TQ2-R Datasheet HTML 1Page - Unisonic Technologies ISL9V3040D3SL-TQ2-R Datasheet HTML 2Page - Unisonic Technologies ISL9V3040D3SL-TQ2-R Datasheet HTML 3Page - Unisonic Technologies ISL9V3040D3SL-TQ2-R Datasheet HTML 4Page - Unisonic Technologies  
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ISL9V3040D3S
Insulated Gate Bipolar Transistor
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R219-011.F
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Emitter Breakdown Voltage
BVCER
450
V
Emitter to Collector Voltage Reverse Battery Condition
BVECS
30
V
TJ=25°C, ISCIS=14.2A, L=3.0mHy
300
mJ
At Starting
TJ= 150°C, ISCIS=10.6A, L=3.0mHy
ESCIS
170
mJ
TC=25°C
21
A
Continuous Collector Current
TC=110°C
IC
17
A
Gate to Emitter Voltage Continuous
VGEM
±10
V
TO-220/TO-263
125
TO-220F
41.6
Power Dissipation Total at TC=25°C
TO-252
125
W
TO-220/TO-263
1
TO-220F
0.332
Power Dissipation Derating TC>25°C
TO-252
PD
1
W/°C
Electrostatic Discharge Voltage at 100pF, 1500Ω
ESD
4
kV
Junction Temperature
TJ
-40~175
°C
Storage Temperature Range
TSTG
-40~175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/TO-252
TO-263
1.0
Junction to Case
TO-220F
θJC
3.0
°C/W



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