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MJE13005L-K-X-T60-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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MJE13005L-K-X-T60-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 9 page ![]() MJE13005-K NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 9 www.unisonic.com.tw QW-R203-045.E ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Emitter Voltage VCEO(SUS) 400 V Collector-Emitter Voltage (VBE=0) VCES 700 V Collector-Base Voltage VCBO 700 V Emitter Base Voltage VEBO 9 V Collector Current Continuous IC 4 A Peak (1) ICM 8 A Base Current Continuous IB 2 A Peak (1) IBM 4 A Emitter Current Continuous IE 6 A Peak (1) IEM 12 A Power Dissipation at TC=25°С TO-220 PD 75 W TO-220F 40 TO-251/TO-251S4 TO-252 50 TO-126 20 Derate above 25°С TO-220 600 mW/°С TO-220F 320 TO-251/TO-251S4 TO-252 400 TO-126 160 Operating and Storage Junction Temperature TJ , TSTG -65 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient Junction to Case TO-220/TO-220F θJA 62.5 °С/W TO-251/TO-251S4 TO-252 80 TO-126 89 TO-220 θJC 1.67 °С/W TO-220F 3.125 TO-251/TO-251S4 TO-252 2.5 TO-126 6.25 |
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