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PUMT1L-AL6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 PUMT1L-AL6-R
상세설명  PNP GENERAL PURPOSE DUAL TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

PUMT1L-AL6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  PUMT1L-AL6-R Datasheet HTML 1Page - Unisonic Technologies PUMT1L-AL6-R Datasheet HTML 2Page - Unisonic Technologies PUMT1L-AL6-R Datasheet HTML 3Page - Unisonic Technologies  
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PUMT1
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R218-001.E
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Base Current
IBM
-200
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
IE=0, VCB=-30V
-100
nA
IE=0, VCB=-30V, TJ=150°C
-10
μA
Emitter Cut-Off Current
IEBO
VEB=-4V, IC=0
-100
nA
DC Current Gain
hFE
IC=-1mA, VCE=-6V
120
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA, IB=-5mA (Note 1)
-200
mV
Collector Capacitance
Cc
IE=IE=0, VCB=-12V, f=1MHz
2.2
pF
Transition Frequency
fT
IC=-2mA, VCE=-12V, f=100MHz
100
MHz
Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%
2. The following characteristics apply to both TR1 and TR2.



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