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UD9JG-AL5-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UD9JG-AL5-R
상세설명  NPN EPITAXIAL TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD9JG-AL5-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UD9JG-AL5-R Datasheet HTML 1Page - Unisonic Technologies UD9JG-AL5-R Datasheet HTML 2Page - Unisonic Technologies UD9JG-AL5-R Datasheet HTML 3Page - Unisonic Technologies  
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UD9J
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R221-034.b
ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified)
RATINGS
PARAMETER
SYMBOL
TR1
TR2
UNIT
Supply Voltage
VCC
50
-50
V
Input Voltage
VIN
-6 ~ +40
-40 ~ +6
V
IOUT
70
-70
mA
Output Current
IC(MAX)
100
-100
mA
Total Power Dissipation (Note 2)
PD
150
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. 120mW per element must not be exceeded.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
TR1
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VI(OFF)
VCC=5V, IOUT=100μA
0.3
V
Input Voltage
VI(ON)
VOUT=0.3V, IOUT=1mA
1.4
V
Output Voltage
VO(ON)
IOUT=5mA, IIN=0.25mA
0.1
0.3
V
Input Current
IIN
VIN=5V
0.88
mA
Output Current
IO(OFF)
VCC=50V, VIN=0V
0.5
µA
DC Current Gain
hFE
VOUT=5V, IOUT=5mA
68
Input Resistance
R1
7
10
13
KΩ
Resistance Ratio
2
1
R
R
3.7
4.7
5.7
Transition Frequency
fT
VCE=10V, IE=-5mA, f=100MHz (Note)
250
MHz
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VI(OFF)
VCC=-5V, IOUT=100μA
-0.3
V
Input Voltage
VI(ON)
VOUT=-0.3V, IOUT=-1mA
-1.4
V
Output Voltage
VO(ON)
IOUT=-5mA, IIN=-0.25mA
-0.1
-0.3
V
Input Current
IIN
VIN=-5V
-0.88 mA
Output Current
IO(OFF)
VCC=-50V, VIN=0V
-0.5
µA
DC Current Gain
hFE
VOUT=-5V, IOUT=-5mA
68
Input Resistance
R1
7
10
13
KΩ
Resistance Ratio
2
1
R
R
3.7
4.7
5.7
Transition Frequency
fT
VCE=-10V, IE=5mA, f=100MHz (Note)
250
MHz



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