MTE1122 datasheet(4/8 Pages) MICROCHIP

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MTE1122

DS21112B-page 4

Preliminary

ELECTRICAL CHARACTERISTICS

Absolute Maximum Rating †

Ambient temperature under bias .................................................................................................................-55 to +125°C

Storage Temperature.............................................................................................................................. -65°C to +150°C

Voltage on any pin with respect to VSS (except VDD and RESET).................................................... -0.6V to VDD +0.6V

Voltage on VDD with respect to VSS ..................................................................................................................0 to +7.5V

Voltage on RESET with respect to VSS (Note 1) ................................................................................................0 to +14V

Total power Dissipation (Note 2) ...........................................................................................................................800mW

Max. Current out of VSS pin ...................................................................................................................................150mA

Max. Current into VDD pin ......................................................................................................................................100mA

Input Clamping Current, IIK (VI<0 or VI>VDD)

.................................................................................................................. ±20mA

Output Clamping Current, IOK (V0<0 or V0>VDD)

.......................................................................................................... ±20mA

Max. Output Current sunk by any I/O pin .................................................................................................................25mA

Max. Output Current sourced by any I/O pin............................................................................................................20mA

Note 1: Voltage spikes below VSS at the RESET pin, inducing currents greater than 80mA, may cause latch-up.

Thus, a series resistor of 50-100

Ω should be used when applying a "low' level to the RESET pin rather than

pulling this pin directly to VSS.

Note 2: Total power dissipation should not exceed 800 mW for the package. Power dissipation is calculated as fol-

lows:

PDIS = VDD x {IDD -

∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)

TABLE 2:

DC CHARACTERISTICS POWER SUPPLY PINS

†NOTICE: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device or compliance to AC and DC parametric specifications at

those or any other conditions above those indicated in the operation listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may affect device reliability.

Power Supply Pins

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40°C

≤ TA ≤ + 85°C for industrial,

0°C

≤ TA ≤ +70°C for commercial

Operating voltage VDD = 4.0V to 6.0V

Characteristic

Sym

Min

Typ

(Note 1)

Max Units

Conditions

Supply Voltage

VDD

4.0

6.0

VDD start voltage to guarantee

power on reset

VPOR

Vss

VDD rise rate to guarantee

Power-On Reset (Note 2)

SVDD

0.05

V/ms

Supply Current (Note 3)

IDD

1.8

3.3

FOSC = 4 MHz, VDD = 5.5V

Note 1: Data in the column labeled “Typical” is based on characterization results at 25

°C. This data is for design guidance only and

is not tested for, or guaranteed by Microchip Technology.

2: This parameter is characterized but not tested.

3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

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