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UG4JG-AL5-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UG4JG-AL5-R
상세설명  EMITTER COMMON
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UG4JG-AL5-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UG4JG-AL5-R Datasheet HTML 1Page - Unisonic Technologies UG4JG-AL5-R Datasheet HTML 2Page - Unisonic Technologies UG4JG-AL5-R Datasheet HTML 3Page - Unisonic Technologies  
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UG4J
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R222-001.B
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Total Power Dissipation
PD
150(Note1)
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note
1. *120mW per element must not be exceeded.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50μA
50
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA
50
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA
5
V
Current Cutoff Current
ICBO
VCB=50V
0.5
µA
Emitter Cutoff Current
IEBO
VEB=4V
0.5
µA
Collector-Emitter Saturation Voltage
VCE(SAT) IC/IB=10mA/1mA
0.3
V
DC Current Transfer Ratio
hFE
VCE=5V, IC=1mA
100
250
600
Transition Frequency
fT
VCE=10V, IE=-5mA, f=100MHz*
250
MHz
Input Resistance
R1
7
10
13
KΩ
Note: * Transition frequency of the device.



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