UP3855G-AA3-R datasheet(3/4 Pages) UTC

부품명	UP3855G-AA3-R

상세설명	PNP MEDIUM POWER LOW SATURATION TRANSISTOR

PDF	4 Pages

Scroll/Zoom	100%

제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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3 / 4 page

UP3855

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R225-007.A



TYPICAL CHARACTERISTICS

0.01

Collector-Emitter Voltage,-VCE(V)

0.1

100

1.0s

100

TA=25ºC

Power Dissipatio vs Ambient Temperature

10ms

100ms

1ms

100m

VCE(SAT) vs. IC

0.0

0.5

1.0

1.5

2.0

Collector Current, -IC (A)

IC /IB=10

25°C

55°C

0.6

0.4

hFE vs. IC

0.8

1.0

1.2

1.4

1.6

10m

100m

150

200

250

100

Collector Current, -IC (A)

55ºC

25ºC

10m

100m

0.4

0.6

0.8

1.0

1.2

55°C

25°C

VBE(SAT) vs. IC

Collector Current, -IC (A)

1.4

IC / IB=10

VCE=5V

10m

100m

VCE(SAT) vs. IC

Collector Current, -IC (A)

10m

100m

IC /IB=10

IC /IB=20

IC /IB=50

TA=25°C

10m

100m

0.4

0.6

0.8

1.0

1.2

55°C

25°C

VBE(ON) vs. IC

Collector Current, -IC (A)

1.4

VCE=5V

300μs

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