UT3416G-AE2-R datasheet(1/3 Pages) UTC

부품명	UT3416G-AE2-R

상세설명	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

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제조업체	UTC [Unisonic Technologies]

홈페이지	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3416

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.E

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR



DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.



FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @ VGS=4.5V, ID =6.5A



SYMBOL



ORDERING INFORMATION

Ordering Number

Package

Pin Assignment

Packing

1

2

3

UT3416G-AE2-R

SOT-23-3

S

G

D

Tape Reel

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel



MARKING

34SG

유사한 부품 번호 - UT3416G-AE2-R

제조업체	부품명	데이터시트	상세설명
Unisonic Technologies	UT3416G-AE2-R	240Kb / 5P	N-CHANNEL MOSFET

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유사한 설명 - UT3416G-AE2-R

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NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
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UT3416G-AE2-R 데이터시트(PDF) 1 Page - Unisonic Technologies

UT3416G-AE2-R 데이터시트(HTML) 1 Page - Unisonic Technologies

유사한 부품 번호 - UT3416G-AE2-R

유사한 설명 - UT3416G-AE2-R

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