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UT3416G-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3416G-AE3-R
상세설명  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3416G-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT3416
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-325.E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Ta=25°C)
ID
6.5
A
Pulsed Drain Current (Note 2)
IDM
30
A
Power Dissipation (Ta=25°C)(Note 3)
PD
1.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1in
2 copper pad of FR4 board.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient (Note)
θJA
85
125
°C/W
Note: Surface mounted on 1 in2 copper pad of FR4 board
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
20
V
Drain-Source Leakage Current
IDSS
VGS =0V, VDS =16V
1
µA
Gate-Source Leakage Current
IGSS
VGS =±4.5V, VDS =0V
±1
µA
VGS = ±8V, VDS =0V
±10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250µA
0.4
0.6
1
V
On State Drain Current
ID(ON)
VGS =4.5V, VDS =5V
30
A
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID =6.5A
18
22
mΩ
VGS =2.5V, ID =5.5A
21
26
mΩ
VGS =1.8V, ID =5A
26
34
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS =0V, VDS =10V, f =1MHz
910
1100
pF
Output Capacitance
COSS
250
270
pF
Reverse Transfer Capacitance
CRSS
230
250
pF
Gate Resistance
RG
VGS =0V , VDS =0V, f =1MHz
1.5
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS =5V, VDS =10V
RL =10Ω, RGEN =3Ω
30
50
ns
Turn-ON Rise Time
tR
75
85
ns
Turn-OFF Delay Time
tD(OFF)
335
360
ns
Turn-OFF Fall-Time
tF
210
250
ns
Total Gate Charge
QG
VDS =10V,VGS =4.5V,ID =6.5A
155
170
nC
Gate Source Charge
QGS
12
nC
Gate Drain Charge
QGD
14
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS =1A, VGS =0V
0.76
1
V
Maximum Body-Diode Continuous
Current
IS
2.5
A
Body Diode Reverse Recovery Time
tRR
IF =6.5A, dI/dt=100A/μs
17.7
ns
Body Diode Reverse Recovery Charge
QRR
6.7
nC
Note: Surface mounted on 1 in2 copper pad of FR4 board.



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