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UT3419G-AE2-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3419G-AE2-R
상세설명  ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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UT3419G-AE2-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT3419
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-391.F
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 1)
TA =25°C
ID
-3.5
A
TA =70°C
-2.8
A
Pulsed Drain Current (Note 2)
IDM
-15
A
Total Power Dissipation (Note 1)
TA =25°C
PD
1.4
W
TA =70°C
0.9
W
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
t ≤ 10s
θJA
90
°C/W
Steady-State
125
°C/W
Notes: 1. The value of θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any a given application depends on the user's specific board
design. The current rating is based on the t ≤ 10s thermal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.



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