전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

UT3443G-AG6-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT3443G-AG6-R
상세설명  P-CHANNEL 2.5-V (G-S) MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3443G-AG6-R 데이터시트(HTML) 2 Page - Unisonic Technologies

  UT3443G-AG6-R Datasheet HTML 1Page - Unisonic Technologies UT3443G-AG6-R Datasheet HTML 2Page - Unisonic Technologies UT3443G-AG6-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
UT3443
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-557.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
Drain Current
Continuous
TJ =150°C (Note 2)
TA=25°C
ID
-4.5
A
TA=70°C
-3.6
A
Pulsed
IDM
-20
A
Power Dissipation (Note 2)
TA=25°C
PD
1.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Note: Surface Mounted on FR4 Board, t≤5 sec
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Leakage Current
IDSS
VDS=-20V, VGS=0V
-1
µA
VDS=-20V, VGS=0V, TC=70°C
-5
Gate- Source Leakage Current
Forward
IGSS
VGS=+12V, VDS=0V
+100
nA
Reverse
VGS=-12V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.6
-1.4
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=-4.5V, ID=-4.5A
0.050 0.065
Ω
VGS=-2.7V, ID=-3.8A
0.070 0.090
Ω
VGS=-2.5V, ID=-3.7A
0.080 0.100
Ω
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
QG
VGS=-4.5V, VDS=-10V, ID=-4.5A
7.3
15
nC
Gate to Source Charge
QGS
2.0
nC
Gate to Drain Charge
QGD
1.9
nC
Gate Resistance
Rg
3
15
Ω
Turn-ON Delay Time
tD(ON)
VDD=-10V, ID≈-1.0A,
VGEN=-4.5V, RL=10Ω, RG=6Ω
15
50
ns
Rise Time
tR
32
60
ns
Turn-OFF Delay Time
tD(OFF)
50
100
ns
Fall-Time
tF
45
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 1)
VSD
IS=-1.7A, VGS=0V
-0.8
-1.2
V
Body Diode Reverse Recovery Time
tRR
IF=-1.7A, di/dt=100A/µs
35
80
ns
Notes: 1. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production testing.



Html Pages

1 2 3


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com