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UP9T15GP-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UP9T15GP-TN3-R
상세설명  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP9T15GP-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UP9T15G
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-208.B
ABSOLUTE MAXIMUM RATINGS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current , @ VGS= 4.5V
TC=25°C
ID
12.5
A
Pulsed Drain Current
IDM
60
A
Power Dissipation
TC=25°C
PD
12.5
W
Linear Derating Factor
0.1
W/°C
Junction Temperature
TJ
+150
°C
Strong Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
110
°C/W
Junction-to-Case
θJC
10
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
20
V
Drain-Source Leakage Current
IDSS
VDS =20 V, VGS =0 V
1
µA
Gate-Body Leakage Current
IGSS
VGS = ±12 V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ 25 , I
℃ D=1mA
0.02
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
0.5
1.5
V
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5 V, ID =6 A
50
mΩ
VGS =2.5 V, ID =5.2 A
80
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =20 V, VGS =0 V,
f=1.0MHz
360
580
pF
Output Capacitance
COSS
70
pF
Reverse Transfer Capacitance
CRSS
50
pF
SWITCHING PARAMETERS
Total Gate Charge(Note2)
QG
VDS =16 V, VGS =4.5 V, ID
=10 A
5
8
nC
Gate Source Charge
QGS
1
nC
Gate Drain Charge
QGD
2
nC
Turn-ON Delay Time(Note2)
tD(ON)
VGS=5 V, VDS=10V,RD=1 Ω,
ID =10 A , RG =3.3 Ω
8
ns
Turn-ON Rise Time
tR
55
ns
Turn-OFF Delay Time
tD(OFF)
10
ns
Turn-OFF Fall-Time
tF
3
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward On Voltage(Note2)
VSD
IS=10 A,VGS=0V
1.3
V
Reverse Recovery Time(Note2)
tRR
IS=10 A, VGS=0 V,dI/dt=100
A/μs
17
ns
Reverse Recovery Charge
QRR
9
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width ≤ 300us , duty cycle ≤ 2%.



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