UT06P03G-AB3-R datasheet(3/6 Pages) UTC

3 / 6 page

UT06P03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-156.D



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =-250µA

-30

Drain-Source Leakage Current

IDSS

VDS =-24V, VGS =0 V

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =-250 µA

-0.9

-1.5

-3

Drain-Source On-State Resistance (Note 2)

RDS(ON)

VGS =-4.5V, ID =-3A

mΩ

VGS =-10V, ID =-4A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =-15V, VGS =0V, f=1MHz

530

Output Capacitance

COSS

135

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Turn-ON Delay Time (Note 2)

tD(ON)

VGS=-10V,VDS=-15V,RG=6Ω,

ID=-1A

5.7

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall Time

Total Gate Charge (Note 2)

VDS=0.5BVDSS, VGS =-10V,

ID =-4A

Gate-Source Charge

QGS

2.2

Gate-Drain Charge

QGD

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

IF = -1A, VGS = 0V

-1.2

Maximum Body-Diode Continuous Current

-2.1

Maximum Pulsed Drain-Source Diode

Forward Current (Note 1)

ISM

-4

Reverse Recovery Time

tRR

IF=-4 A, dIF/dt=100A/μs

15.5

Recovery Charge

QRR

7.9

Notes: 1. Pulse width limited by TJ(MAX)

2. Pulse width ≤300us, duty cycle ≤2%.

3. Surface mounted on 1 in

2 copper pad of FR4 board.

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