UT30P03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-335.C



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-30

A

Power Dissipation

50

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

50

°C/W

Junction to Case

3

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-30

V

Drain-Source Leakage Current

-1

μA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-3

V

Static Drain-Source On-State Resistance

(Note)

30

40

mΩ

40

60

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

700

pF

Output Capacitance

130

pF

Reverse Transfer Capacitance

120

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

25

ns

Turn-On Rise Time

50

ns

Turn-Off Delay Time

380

ns

Turn-Off Fall Time

180

ns

Total Gate Charge

100

nC

Gate-Source Charge

15

nC

Gate-Drain Charge

10

nC

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

-1.2

V

Maximum Continuous Drain-Source Diode

Forward Current

-30

A

Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2%