전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

UT30P04G-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UT30P04G-TN3-R
상세설명  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT30P04G-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies

  UT30P04G-TN3-R Datasheet HTML 1Page - Unisonic Technologies UT30P04G-TN3-R Datasheet HTML 2Page - Unisonic Technologies UT30P04G-TN3-R Datasheet HTML 3Page - Unisonic Technologies UT30P04G-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
UT30P04
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-465.C
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-40
V
VDS=-32V, VGS=0V
1
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V, TJ=125°C
10
µA
Gate- Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±250 nA
On-State Drain Current (Note 1)
ID(ON)
VDS=-5V, VGS=-10V
-70
A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-2.5
-3
V
VGS=-5V, ID=-8A
65
73
VGS=-7V, ID=-8A
35
50
Static Drain-Source On-State
Resistance (Note 1)
RDS(ON)
VGS=-10V, ID=-10A
30
40
mΩ
Forward Transconductance (Note 1)
gFS
VDS=-10V, ID=-10A
20
S
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1.0MHz
4.95
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
1090
Output Capacitance
COSS
175
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-20V, f=1.0MHz
91
pF
GATE CHARGE
(Note 2)
QG (VGS=-10V)
17
Total Gate Charge
QG (VGS=-4.5V)
8.5
Gate to Source Charge
QGS
5.5
Gate to Drain Charge
QGD
VDS=0.5V(BR)DSS, ID=-18A
3
nC
SWITCHING PARAMETERS
(Note 2)
Turn-ON Delay Time
tD(ON)
6
ns
Rise Time
tR
16
ns
Turn-OFF Delay Time
tD(OFF)
26
ns
Fall-Time
tF
VGS=-10V, VDS=-20V, ID≈-10A,
RGS=6Ω, RL=2Ω
10
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Current
IS
-21
A
Drain-Source Diode Forward Voltage
1
VSD
IF=-10A, VGS=0V
-1.2
V
Reverse Recovery Time
tRR
15.5
ns
Reverse Recovery Charge
QRR
IF=-10A, dIF/dt=100A/µs
7.9
nC
Notes: 1. Pulsde test: Pulse width ≤ 300µsec, duty cycle ≤ 2%.
2. Independent of operating temperature.



Html Pages

1 2 3 4


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com