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UT4422G-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UT4422G-S08-R
상세설명  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT4422G-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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UT4422
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-206.C
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (TA=25°C) (Note 1)
ID
11
A
Pulsed Drain Current
IDM
50
A
Power Dissipation (TC=25°C)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
59 ~ 75
°C/W
Junction to Case
θJC
16 ~ 24
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24 V, VGS =0 V
0.003
1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20 V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
1.8
3
V
On State Drain Current
ID(ON)
VDS =5V, VGS =4.5 V
40
A
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V, ID =11A
12.6
15
mΩ
VGS =4.5 V, ID =10 A
19.6
24
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =15V, VGS =0V, f=1MHz
800
1040 1250
pF
Output Capacitance
COSS
140
180
220
pF
Reverse Transfer Capacitance
CRSS
80
110
140
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =15V, VGS =10V, ID =11A
15
19.8
24
nC
Gate Source Charge
QGS
2.5
nC
Gate Drain Charge
QGD
3.5
nC
Turn-ON Delay Time
tD(ON)
VGS=10V,VDS=15V,RL=1.35Ω,
RGEN =3Ω
4.5
6.5
ns
Turn-ON Rise Time
tR
3.9
5.5
ns
Turn-OFF Delay Time
tD(OFF)
17.4
25
ns
Turn-OFF Fall-Time
tF
3.2
5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=1A,VGS=0V
0.75
1
V
Maximum Body-Diode Continuous
Current
IS
4.3
A
Body Diode Reverse Recovery Time
tRR
IF=11 A, dI/dt=100A/μs
17.5
21
ns
Body Diode Reverse Recovery
Charge
QRR
9.3
12
nC



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