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UT6401G-AG6-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
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UT6401G-AG6-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
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3 / 5 page ![]() UT6401 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 5 www.unisonic.com.tw QW-R502-151.D TYPICAL CHARACTERISTICS 25℃ 125℃ 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Voltage, -VSD (V) Body-Diode Characteristics 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 ID=-2A 125℃ 25℃ 190 170 150 110 130 90 70 50 30 1 0 02 4 6 8 10 Gate-Source Voltage, -VGS (V) On-Resistance vs. Gate-Source Voltage |
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