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UT9435G-S08-R 데이터시트(PDF) 3 Page - Unisonic Technologies

부품명 UT9435G-S08-R
상세설명  P-CHANNEL POWER MOSFET
PDF  4 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT9435G-S08-R 데이터시트(HTML) 3 Page - Unisonic Technologies

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UT9435
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-155.D
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-20
A
Power Dissipation (TA=25°C)
SOT-89
PD
1.25
W
SOP-8
2.5
Power Dissipation (TC=25°C)
TO-252
PD
12.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOT-89
θJA
100
°C/W
TO-252
110
SOP-8
50
Note: Surface mounted on 1 in
2 copper pad of FR4 board, t ≤10s.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VGS= ±20V
±100
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ Reference to 25 , I
℃ D=-1mA
-0.1
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-1
-3
V
Static Drain-Source On-Resistance (Note 2)
RDS(ON)
VGS=-10V, ID=-4A
50
mΩ
VGS=-4.5V, ID=-2A
90
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V,VDS=-25V,f=1.0MHz
520
830
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
130
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-15V,ID=-1A, RG=3.3Ω,
VGS=-10V,RD=15Ω
10
48
ns
Turn-ON Rise Time
tR
7
40
ns
Turn-OFF Delay Time
tD(OFF)
26
292
ns
Turn-OFF Fall Time
tF
14
112
ns
Total Gate Charge (Note 2)
QG
VDS=-25V, VGS=-4.5V, ID=-4A
10
16
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A, VGS=0V
-1.3
V
Reverse Recovery Time
tRR
IS=-4A, VGS=0V,
dI/dt=-100A/μs
30
ns
Reverse Recovery Charge
QRR
24
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300µs , duty cycle ≤2%.



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