SCS152-IW datasheet(13/16 Pages) MICROCHIP

13 / 16 page

SCS152

Preliminary

DS40150B-page 13

8.0

DEVICE CHARACTERISTICS

TABLE 8-1:

ABSOLUTE MAXIMUM RATINGS

Description

Symbol

Min.

Max.

Units

Supply voltage, with respect to GND

VDD

-0.3

6.0

Input voltage, with respect to GND

-0.3

6.0

Storage temperature

-55

+85

°C

ESD protection on all pins (HBM)

VESD

—

4000

TABLE 8-2:

DC CHARACTERISTICS

VDD: 5.0 V

± 10%

TA:

-40

°C to +85°C

Description

Symbol

Min.

Typ.

Max.

Units

Condition

Current when reading

IDDR

—

300

600

µA

SDIO = VDD

Current when programming

IDDP

—

1.2

1.6

SDIO = VDD

Input low voltage

VIL

—

0.8

Input high voltage

VIH

3.0

—

Output low voltage

VOL

—

0.4

Sinking current, Io = 1 mA

TABLE 8-3:

AC CHARACTERISTICS

VDD: 5 V

± 10%

TA:

-40

°C to +85°C

RPU = 10K

Description

Symbol

Min.

Typ.

Max.

Units

Time from VDD high until device accepts com-

mands

TPOR

—

3.5

Overlap of SCI with SCK during RESET

TOX

2.0

—

µs

Overlap period of SCI and SCK during RESET

35.0

—

µs

SCK high

10.0

—

µs

SCK low

10.0

—

µs

SCK/SCI falling to SCI changing for BITPROG,

ERASE, etc.

5.0

—

µs

SCI high pulse during BITPROT, ERASE, etc.

2.0

—

µs

SDIO changing from falling edge of SCI/SCK

during RESET

TD1

—

1.8

—

µs

SDIO changing from falling edge of SCK during

RDBIT

TD2

—

1.8

4.7

µs

SDIO tri-state after rising edge of SCK

TD3

4.5

—

µs

Time to program EEPROM during BITPROG,

ERASE, DECR-ERASE, etc.

TPROG

1.4

—

3.4

Time to compute signature from falling edge of

SCK where last challenge bit is entered

TSIGN

—

2.5

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