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TC1014 데이터시트(PDF) 11 Page - Microchip Technology |
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TC1014 데이터시트(HTML) 11 Page - Microchip Technology |
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11 / 20 page ![]() © 2002 Microchip Technology Inc. DS21335B-page 11 TC1014/TC1015/TC1185 5.0 TYPICAL CHARACTERISTICS (CONTINUED) VSHDN VOUT Measure Rise Time of 3.3V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 448µS VSHDN VOUT Measure Fall Time of 3.3V LDO With Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA VIN = 4.3V, Temp = 25°C, Fall Time = 100µS Measure Rise Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Rise Time = 184µS VSHDN VOUT VOUT VSHDN Measure Fall Time of 3.3V LDO Without Bypass Capacitor Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA VIN = 4.3V, Temp = 25°C, Fall Time = 52µS |
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