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UT2352G-AE3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 UT2352G-AE3-R
상세설명  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT2352G-AE3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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UT2352
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-157.E
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
ID
-1.3
A
Pulsed Drain Current
IDM
-10
A
SOT-23
0.46
W
Power Dissipation (Note 3)
DFN-8(3×3)
PD
2.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
SYMBOL
RATING
UNIT
SOT-23
250
°C/W
Junction-to-Ambient (Note 3)
DFN-8(3×3)
θJA
52
°C/W
SOT-23
75
°C/W
Junction-to-Case
DFN-8(3×3)
θJC
3
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VGS=±25V, VDS=0V
±100
nA
Breakdown Voltage Temperature
Coefficient
∆BVDSS/∆TJ Reference to 25℃, ID=-250uA
-17
mV/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.8
-2.0
-2.5
V
VGS=-10V, ID=-1.3A
150
180
mΩ
Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=-4.5V, ID=-1.1A
250
300
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
150
pF
Output Capacitance
COSS
40
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V, f=1MHz
20
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
1.4
1.9
nC
Gate-Source Charge
QGS
0.5
nC
Gate-Drain Charge
QGD
VDS=-10V, VGS=-4.5V,
ID=-0.9A
0.5
nC
Turn-ON Delay Time (Note 2)
tD(ON)
4
8
ns
Turn-ON Rise Time
tR
15
28
ns
Turn-OFF Delay Time
tD(OFF)
10
18
ns
Turn-OFF Fall Time
tF
VDD=-10V, VGS=-10V, ID=-1A,
RG=6Ω
1
2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward
Voltage(Note2)
VSD
VGS=0V, IS=-0.42 A
-0.8
-1.2
V
Maximum Continuous Drain Source Diode
Forward Current
IS
-0.42
A
Reverse Recovery Time
tRR
17
ns
Reverse Recovery Charge
QRR
IF = -3.9 A, dIF/dt = 100 A/μs
7
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 0.001 in
2 pad of 2oz. copper; 270℃/W when mounted on min.



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