PESDXS1UB_SERIES_2

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 02 — 24 August 2009

3 of 15

NXP Semiconductors

PESDxS1UB series

ESD protection diodes in SOD523 package

5.

Limiting values

[1]

Non-repetitive current pulse 8/20

µs exponentially decay waveform; see Figure 1.

[1]

Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak pulse power

8/20

µs

[1]

PESD3V3S1UB

-

330

W

PESD5V0S1UB

-

260

W

PESD12VS1UB

-

180

W

PESD15VS1UB

-

160

W

PESD24VS1UB

-

160

W

peak pulse current

8/20

µs

[1]

PESD3V3S1UB

-

18

A

PESD5V0S1UB

-

15

A

PESD12VS1UB

-

5

A

PESD15VS1UB

-

5

A

PESD24VS1UB

-

3

A

junction temperature

-

150

°C

operating ambient

temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6.

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

ESD

electrostatic discharge

capability

IEC 61000-4-2

(contact discharge)

[1]

PESD3V3S1UB

-

30

kV

PESD5V0S1UB

-

30

kV

PESD12VS1UB

-

30

kV

PESD15VS1UB

-

30

kV

PESD24VS1UB

-

23

kV

PESDxS1UB series

HBM MIL-STD883

-

10

kV

Table 7.

ESD standards compliance

Standard

Conditions

IEC 61000-4-2, level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

HBM MIL-STD883, class 3

> 4 kV