1N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-529.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

1.4

A

Drain Current

Pulsed (Note 2)

5.6

A

Avalanche Current (Note 2)

1.4

A

Single Pulsed (Note 3)

85

mJ

Avalanche Energy

Repetitive (Note 2)

2.5

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

25

W

Power Dissipation

TO-92

2.5

W

TO-220

0.2

W/°C

Derate above 25°C

TO-92

0.02

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-92

140

°C/W

TO-220

5.0

Junction to Case

TO-92

50

°C/W