6N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-486.E



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

±20

V

Continuous Drain Current

Continuous

6.5

A

Pulsed

8.0

A

Repetitive Avalanche Energy

(Duty Cycle ≤1%)

L=0.1mH

1.25

mJ

Power Dissipation

SOT-223

2.2

W

TO-252/TO-252D

16

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

SOT-223

55

°C/W

TO-252/TO-252D

100

Junction to Case

SOT-223

12

°C/W

TO-252/TO-252D

7.5

reference is defined as the solder mounting surface of the drain pins.