UD4614

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 10

www.unisonic.com.tw

QW-R502-147.G



N-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

6

A

Pulsed Drain Current (Note3)

20

A

TO-252-4

3.125

W

SOP-8

2

W

TO-252-4

2

W

Power Dissipation

SOP-8

1.28

W

Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

P-Channel:

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note3)

-5

A

Pulsed Drain Current (Note3)

-20

A

TO-252-4

3.125

W

SOP-8

2

W

TO-252-4

2

W

Power Dissipation

SOP-8

1.28

W

Junction Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-252-4

40

Junction to Ambient

SOP-8

62.5

°C/W

Note: Surface Mounted on 1in