| 전자부품 데이터시트 검색엔진 |
|
19N10G-TQ2-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
19N10G-TQ2-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
|
1 / 8 page ![]() UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R502-261.J 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. FEATURES * RDS(ON) < 0.1Ω @ VGS=10V, ID=7.8A * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness SYMBOL |
유사한 부품 번호 - 19N10G-TQ2-R |
|
유사한 설명 - 19N10G-TQ2-R |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |