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UP2790G-S08-R 데이터시트(PDF) 4 Page - Unisonic Technologies

부품명 UP2790G-S08-R
상세설명  SWITCHING N- AND P-CHANNEL POWER MOSFET
PDF  6 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP2790G-S08-R 데이터시트(HTML) 4 Page - Unisonic Technologies

  UP2790G-S08-R Datasheet HTML 1Page - Unisonic Technologies UP2790G-S08-R Datasheet HTML 2Page - Unisonic Technologies UP2790G-S08-R Datasheet HTML 3Page - Unisonic Technologies UP2790G-S08-R Datasheet HTML 4Page - Unisonic Technologies UP2790G-S08-R Datasheet HTML 5Page - Unisonic Technologies UP2790G-S08-R Datasheet HTML 6Page - Unisonic Technologies  
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UP2790
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
4 of 6
www.unisonic.com.tw
QW-R502-339.C
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
N-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
V
Drain-Source Leakage Current
IDSS
VDS =30 V, VGS =0 V
10
µA
Gate- Source Leakage Current
IGSS
VGS = ±16 V, VDS=0 V
±10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =10V, ID =1mA
1.5
2.5
V
Static Drain-Source On-State
Resistance (Note)
RDS(ON)
VGS =10 V, ID =3 A
21
28
mΩ
VGS =4.5 V, ID =3 A
28
40
mΩ
VGS =4.0 V, ID =3 A
34
53
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =10 V, VGS =0 V, f=1MHz
500
pF
Output Capacitance
COSS
135
pF
Reverse Transfer Capacitance
CRSS
77
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=15V, VGS=10 V
ID=3 A, RG=10 Ω
9.2
ns
Turn-ON Rise Time
tR
8.8
ns
Turn-OFF Delay Time
tD(OFF)
28
ns
Turn-OFF Fall-Time
tF
7.4
ns
Total Gate Charge
QG
VDD =24 V, VGS =10 V, ID =6 A
12.6
nC
Gate to Source Charge
QGS
1.7
nC
Gate to Drain Charge
QGD
3.8
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS = 6 A, VGS =0V (Note)
0.85
V
Diode Continuous Forward Current
IS
6
A
Diode Pulse Current
ISM
24
A
P-Channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-30 V, VGS =0 V
-10
µA
Gate- Source Leakage Current
IGSS
VGS = ±16 V, VDS=0 V
±10
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =-10V, ID =-1mA
-1.0
-2.5
V
Static Drain-Source On-State
Resistance (Note)
RDS(ON)
VGS =-10 V, ID =-3 A
43
60
mΩ
VGS =-4.5 V, ID =-3 A
58
80
mΩ
VGS =-4.0 V, ID =-3 A
65
110
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =-10 V, VGS =0 V, f=1.0MHz
460
pF
Output Capacitance
COSS
130
pF
Reverse Transfer Capacitance
CRSS
77
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VDD=-15V, VGS=-10 V
ID=-3 A , RG=10 Ω,
8.5
ns
Turn-ON Rise Time
tR
4.8
ns
Turn-OFF Delay Time
tD(OFF)
42
ns
Turn-OFF Fall-Time
tF
19
ns
Total Gate Charge
QG
VDD =-24 V, VGS =-10 V, ID =-6 A
11
nC
Gate Source Charge
QGS
1.7
nC
Gate Drain Charge
QGD
3.3
nC



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