2N60G-TND-R datasheet(1/7 Pages) UTC

1 / 7 page

UNISONIC TECHNOLOGIES CO., LTD

2N60

Power MOSFET

www.unisonic.com.tw

1 of 7

QW-R502-053.Z

2A, 600V N-CHANNEL

POWER MOSFET



DESCRIPTION

The UTC 2N60 is a high voltage power MOSFET and

is designed to have better characteristics, such as fast

switching time, low gate charge, low on-state resistance

and have a high rugged avalanche characteristics. This

power MOSFET is usually used at high speed switching

applications in power supplies, PWM motor controls,

high efficient DC to DC converters and bridge circuits.



FEATURES

* RDS(ON) < 5Ω@ VGS = 10V, ID =1A

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness



SYMBOL

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