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4N90L-TN3-R 데이터시트(PDF) 1 Page - Unisonic Technologies |
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4N90L-TN3-R 데이터시트(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD 4N90 Power MOSFET www.unisonic.com.tw 1 of 7 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R502-479.F 4 Amps, 900 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is designed to meet the requirements of the minimum on-state resistance and perfect switching performance. It also can withstand high energy pulse in the avalanche and communication mode. The UTC 4N90 is particularly applied in high efficiency switch mode power supplies. FEATURES * RDS(ON) < 4.2Ω @ VGS=10V * High switching speed * 100% avalanche tested * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 4N90L-TA3-T 4N90G-TA3-T TO-220 G D S Tube 4N90L-TF3-T 4N90G-TF3-T TO-220F G D S Tube 4N90L-TF1-T 4N90G-TF1-T TO-220F1 G D S Tube 4N90L-TF2-T 4N90G-TF2-T TO-220F2 G D S Tube 4N90L-TF3T-T 4N90G-TF3T-T TO-220F3 G D S Tube 4N90L-TM3-T 4N90G-TM3-T TO-251 G D S Tube 4N90L-TN3-R 4N90G-TN3-R TO-252 G D S Tape Reel 4N90L-T3N-T 4N90G-T3N-T TO-3PN G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
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