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10NN15G-S08-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 10NN15G-S08-R
상세설명  DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
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10NN15G-S08-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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10NN15
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-565.D
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
150
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous (Note 3)
ID
3
A
Pulsed (Note 2)
IDM
12
A
Power Dissipation
PD
2
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by Max. junction temperature.
3. Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min. copper pad.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 3)
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
150
V
Drain-Source Leakage Current
IDSS
VDS=150V, VGS=0V
10
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=3A
400 mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
420 672
pF
Output Capacitance
COSS
60
pF
Reverse Transfer Capacitance
CRSS
40
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=120V, ID=3A
(Note 1, 2)
10
16
nC
Gate to Source Charge
QGS
2
nC
Gate to Drain Charge
QGD
4
nC
Turn-ON Delay Time
tD(ON)
VDS=75V, VGS=10V, ID=3A,
RG=3.3Ω (Note 1, 2)
6.5
ns
Rise Time
tR
7
ns
Turn-OFF Delay Time
tD(OFF)
14
ns
Fall-Time
tF
35
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=3A, VGS=0V
1.3
V
Body Diode Reverse Recovery Time
tRR
IS=3A, VGS=0V, dIF/dt=100A/µs
40
ns
Body Diode Reverse Recovery Charge
QRR
75
µC
Notes: 1. Pulse width ≤ 300µs, duty cycle ≤ 2%
2. Essentially independent of operating temperature



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