UT60N03

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-237.D



PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

60

A

TO-220

60

Power Dissipation

TO-251/TO-252

45

W

TO-220

0.4

Derate above 25°C

TO-251/TO-252

0.37

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL RESISTANCES CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-251/TO-252

100

°C/W

TO-220

2.5

Junction to Case

TO-251/TO-252

2.73

°C/W